npn 2N1893 comset semiconductors 1/3 medium power transistor the 2N1893 are npn transistors mounted in to-39 metal package. they are intended for use in high performance amp lifier, oscillator and switching applications. compliance to rohs . absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 80 v v cbo collector-base voltage (i e = 0) 120 v v cer collector-emitter voltage (r be = 10 ? ) 100 v v ebo emitter-base voltage 7 v i c collector current 0.5 a i cm peak collector current 1 a i bm peak base current 0.2 a p d total power dissipation t amb = 25c 0.8 w t case = 25c 3 t case = 100c 1.7 t j junction temperature 200 c t st g storage temperature range -65 to +150 t amb operating ambient temperature -65 to +150 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 58.3 c/ w r th j -a thermal resistance from junction to ambient in free air 219
npn 2N1893 11/09/2012 comset semiconductors 3/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 90 v i e = 0 t amb = 25c - - 10 na t amb = 150c - - 15 a i ebo emitter cutoff current v eb = 5 v, i b = 0 - - 10 na v cbo collector base sustaining voltage i c = 100 ma, i e = 0 120 - - v v ceo collector emitter sustaining voltage (*) i c = 10 ma, i b = 0 80 - - v v cer collector base breakdown voltage (*) i c = 10 ma, r be = 10 ? 100 - - v v ebo emitter base breakdown voltage i e = 100 a, i c = 0 7 - - v h fe dc current gain (*) i c = 0.1 ma, v ce = 10 v 20 - - - i c = 10 ma v ce = 10 v t amb = 25c 20 - - t amb = -55c 35 - i c = 150 ma, v ce = 10 v 40 - 120 v ce(sat) collector-emitter saturation voltage (*) i c = 50 ma, i b = 5 ma - - 0.9 v i c = 150 ma, i b = 15 ma - - 0.5 v be(sat) base-emitter saturation voltage (*) i c = 50 ma, i b = 5 ma - - 1.2 v i c = 150 ma, i b = 15 ma - - 1.3 f t transition frequency i c = 50 ma, v ce = 10 v f= 20 mhz 50 - - mhz c c collector capacitance i e = i e = 0 ,v cb = 10 v f = 1mhz - - 15 pf c e base capacitance i c = i c = 0 ,v eb = 0.5 v f = 1mhz - - 85 pf (*) pulse conditions : tp < 300 s, =2%.
npn 2N1893 11/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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